ZXMHC6A07T8TA

new-10%

Manufacturer part number:ZXMHC6A07T8TA

Manufacturer:Diodes Incorporated

Description:MOSFET 2N/2P-CH 60V SM8

Case Package:SOT-23

Datasheet:ZXMHC6A07T8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Gull Wing
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	425mOhm
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	60V
Max Power Dissipation	1.7W
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Current Rating	1.8A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ZXMHC6A07T8
Pin Count	8
Number of Elements	4
Number of Channels	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.7W
Output Current	2.2A
Turn On Delay Time	1.6 ns
Power - Max	1.3W
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	166pF @ 40V
Current - Continuous Drain (Id) @ 25°C	1.6A 1.3A
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 10V
Rise Time	2.3ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	5.8 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.8A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.6mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free