FDC3601N      Description

These N-channel 100V MOSFET are manufactured using an advanced PowerTrack process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.

FDC3601N       Features

1.0 A, 100 V

RDS(on) = 500 m|[email protected] VGS = 10 V

RDS(on) = 550 m|? @ VGS = 6 V

Low gate charge (3.7nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT?-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick)

FDC3601N             Applications

This product is general usage and suitable for many different applications.