ZXT10P20DE6QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT10P20DE6QTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Power - Max
1.1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 150mA, 2.5A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
2.5A
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.26000
$0.26
500
$0.2574
$128.7
1000
$0.2548
$254.8
1500
$0.2522
$378.3
2000
$0.2496
$499.2
2500
$0.247
$617.5
ZXT10P20DE6QTA Product Details
ZXT10P20DE6QTA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 150mA, 2.5A.The device exhibits a collector-emitter breakdown at 20V.
ZXT10P20DE6QTA Features
the DC current gain for this device is 300 @ 100mA 2V the vce saturation(Max) is 350mV @ 150mA, 2.5A
ZXT10P20DE6QTA Applications
There are a lot of Diodes Incorporated ZXT10P20DE6QTA applications of single BJT transistors.