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MMST3904-7-F

MMST3904-7-F

MMST3904-7-F

Diodes Incorporated

MMST3904-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMST3904-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMST3904
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current 200mA
Turn On Time-Max (ton) 70ns
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.061581 $0.061581
500 $0.045280 $22.64
1000 $0.037733 $37.733
2000 $0.034618 $69.236
5000 $0.032353 $161.765
10000 $0.030096 $300.96
15000 $0.029106 $436.59
50000 $0.028620 $1431
MMST3904-7-F Product Details

MMST3904-7-F Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.When collector current reaches its maximum, it can reach 200mA volts.

MMST3904-7-F Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

MMST3904-7-F Applications


There are a lot of Diodes Incorporated MMST3904-7-F applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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