MMST3904-7-F Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.When collector current reaches its maximum, it can reach 200mA volts.

MMST3904-7-F Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

MMST3904-7-F Applications

There are a lot of Diodes Incorporated MMST3904-7-F applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver