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2SC3838KT146P

2SC3838KT146P

2SC3838KT146P

ROHM Semiconductor

2SC3838KT146P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC3838KT146P Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC3838
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 3.2 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 11V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 11V
Transition Frequency 3200MHz
Max Breakdown Voltage 11V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 56
Continuous Collector Current 50mA
VCEsat-Max 0.5 V
Highest Frequency Band S B
Collector-Base Capacitance-Max 1.5pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.089357 $0.089357
500 $0.065704 $32.852
1000 $0.054753 $54.753
2000 $0.050233 $100.466
5000 $0.046946 $234.73
10000 $0.043671 $436.71
15000 $0.042235 $633.525
50000 $0.041529 $2076.45
2SC3838KT146P Product Details

2SC3838KT146P Overview


This device has a DC current gain of 56 @ 5mA 10V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 5mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of 50mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 3V can result in a high level of efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 3200MHz.There is a breakdown input voltage of 11V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.

2SC3838KT146P Features


the DC current gain for this device is 56 @ 5mA 10V
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz

2SC3838KT146P Applications


There are a lot of ROHM Semiconductor 2SC3838KT146P applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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