NJVBUB323ZT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVBUB323ZT4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
150W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection
COLLECTOR
Power - Max
150W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1.7V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 5A 4.6V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.7V @ 250mA, 10A
Collector Emitter Breakdown Voltage
350V
Transition Frequency
2MHz
Frequency - Transition
2MHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.90823
$1526.584
NJVBUB323ZT4G Product Details
NJVBUB323ZT4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.7V @ 250mA, 10A.There is a transition frequency of 2MHz in the part.In extreme cases, the collector current can be as low as 10A volts.
NJVBUB323ZT4G Features
the DC current gain for this device is 500 @ 5A 4.6V the vce saturation(Max) is 1.7V @ 250mA, 10A a transition frequency of 2MHz
NJVBUB323ZT4G Applications
There are a lot of ON Semiconductor NJVBUB323ZT4G applications of single BJT transistors.