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NJVBUB323ZT4G

NJVBUB323ZT4G

NJVBUB323ZT4G

ON Semiconductor

NJVBUB323ZT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVBUB323ZT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation150W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Power - Max 150W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A 4.6V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A
Collector Emitter Breakdown Voltage350V
Transition Frequency 2MHz
Frequency - Transition 2MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3155 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$1.90823$1526.584

NJVBUB323ZT4G Product Details

NJVBUB323ZT4G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.7V @ 250mA, 10A.There is a transition frequency of 2MHz in the part.In extreme cases, the collector current can be as low as 10A volts.

NJVBUB323ZT4G Features


the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
a transition frequency of 2MHz

NJVBUB323ZT4G Applications


There are a lot of ON Semiconductor NJVBUB323ZT4G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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