ZXTN04120HKTC Overview

In this device, the DC current gain is 2000 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1mA, 1A.A 1.5A continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 14V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 150MHz.Input voltage breakdown is available at 120V volts.Maximum collector currents can be below 1.5A volts.

ZXTN04120HKTC Features

the DC current gain for this device is 2000 @ 1A 5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 14V
a transition frequency of 150MHz

ZXTN04120HKTC Applications

There are a lot of Diodes Incorporated ZXTN04120HKTC applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter