MPSW06 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 250mA 1V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.50MHz is present in the transition frequency.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MPSW06 Features

the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz

MPSW06 Applications

There are a lot of ON Semiconductor MPSW06 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter