NJVMJD31CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD31CG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.56W
Element Configuration
Single
Gain Bandwidth Product
3MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
40V
hFE Min
10
Continuous Collector Current
3A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.600000
$0.6
10
$0.566038
$5.66038
100
$0.533998
$53.3998
500
$0.503772
$251.886
1000
$0.475256
$475.256
NJVMJD31CG Product Details
NJVMJD31CG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.During maximum operation, collector current can be as low as 5A volts.
NJVMJD31CG Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A
NJVMJD31CG Applications
There are a lot of ON Semiconductor NJVMJD31CG applications of single BJT transistors.