2SA2016-TD-E Overview

In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 240mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In the part, the transition frequency is 290MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 7A volts at its maximum.

2SA2016-TD-E Features

the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 240mV
the vce saturation(Max) is 400mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 290MHz

2SA2016-TD-E Applications

There are a lot of ON Semiconductor 2SA2016-TD-E applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver