BDX53CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX53CG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
65W
Peak Reflow Temperature (Cel)
260
Current Rating
8A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BDX53
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
20MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
Height
9.28mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.93000
$0.93
50
$0.79180
$39.59
100
$0.65450
$65.45
500
$0.54482
$272.41
1,000
$0.43507
$0.43507
BDX53CG Product Details
BDX53CG Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 12mA, 3A.A 4A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In this part, there is a transition frequency of 20MHz.A maximum collector current of 8A volts can be achieved.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 12mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 8A a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor BDX53CG applications of single BJT transistors.