ZXTN19020DZTA Overview

In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 375mA, 7.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.As you can see, the part has a transition frequency of 160MHz.The breakdown input voltage is 20V volts.Collector current can be as low as 7.5A volts at its maximum.

ZXTN19020DZTA Features

the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz

ZXTN19020DZTA Applications

There are a lot of Diodes Incorporated ZXTN19020DZTA applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter