ZXTN19020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN19020DZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN19020D
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2.4W
Gain Bandwidth Product
160MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
7.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 375mA, 7.5A
Collector Emitter Breakdown Voltage
20V
Max Frequency
160MHz
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.194451
$0.194451
10
$0.183443
$1.83443
100
$0.173060
$17.306
500
$0.163264
$81.632
1000
$0.154023
$154.023
ZXTN19020DZTA Product Details
ZXTN19020DZTA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 375mA, 7.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.As you can see, the part has a transition frequency of 160MHz.The breakdown input voltage is 20V volts.Collector current can be as low as 7.5A volts at its maximum.
ZXTN19020DZTA Features
the DC current gain for this device is 300 @ 100mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 375mA, 7.5A the emitter base voltage is kept at 7V a transition frequency of 160MHz
ZXTN19020DZTA Applications
There are a lot of Diodes Incorporated ZXTN19020DZTA applications of single BJT transistors.