MJE371 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE371 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
40W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 1V
Current - Collector Cutoff (Max)
100μA ICBO
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
4A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.14000
$0.14
500
$0.1386
$69.3
1000
$0.1372
$137.2
1500
$0.1358
$203.7
2000
$0.1344
$268.8
2500
$0.133
$332.5
MJE371 Product Details
MJE371 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 1A 1V.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
MJE371 Features
the DC current gain for this device is 40 @ 1A 1V
MJE371 Applications
There are a lot of Rochester Electronics, LLC MJE371 applications of single BJT transistors.