FJP5027RTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 300mA, 1.5A.The emitter base voltage can be kept at 7V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.A transition frequency of 15MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
FJP5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJP5027RTU Applications
There are a lot of ON Semiconductor FJP5027RTU applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
