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FJP5027RTU

FJP5027RTU

FJP5027RTU

ON Semiconductor

FJP5027RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP5027RTU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 800V
Max Power Dissipation 50W
Current Rating 3A
Frequency 15MHz
Base Part Number FJP5027
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Transistor Application SWITCHING
Gain Bandwidth Product 15MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 200mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Collector Emitter Breakdown Voltage 800V
Transition Frequency 15MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 1.1kV
Emitter Base Voltage (VEBO) 7V
hFE Min 10
Height 15.7mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.322518 $0.322518
10 $0.304262 $3.04262
100 $0.287040 $28.704
500 $0.270792 $135.396
1000 $0.255465 $255.465
FJP5027RTU Product Details

FJP5027RTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 300mA, 1.5A.The emitter base voltage can be kept at 7V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.A transition frequency of 15MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

FJP5027RTU Features


the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz

FJP5027RTU Applications


There are a lot of ON Semiconductor FJP5027RTU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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