MSD1819A-RT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2mA 10V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.This device can take an input voltage of 50V volts before it breaks down.When collector current reaches its maximum, it can reach 100mA volts.
MSD1819A-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
MSD1819A-RT1G Applications
There are a lot of ON Semiconductor MSD1819A-RT1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
