NSV40201LT1G Overview

DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 115mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.A maximum collector current of 2A volts can be achieved.

NSV40201LT1G Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 115mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

NSV40201LT1G Applications

There are a lot of ON Semiconductor NSV40201LT1G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter