NSV40201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSV40201LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
460mW
Frequency
150MHz
Base Part Number
NSS40201
Pin Count
3
Number of Elements
1
Configuration
Single
Power Dissipation
540mW
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
115mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
2A
Transition Frequency
150MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.044129
$0.044129
500
$0.032448
$16.224
1000
$0.027040
$27.04
2000
$0.024807
$49.614
5000
$0.023184
$115.92
10000
$0.021567
$215.67
15000
$0.020858
$312.87
50000
$0.020509
$1025.45
NSV40201LT1G Product Details
NSV40201LT1G Overview
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 115mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.A maximum collector current of 2A volts can be achieved.
NSV40201LT1G Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 115mV @ 200mA, 2A the emitter base voltage is kept at 6V a transition frequency of 150MHz
NSV40201LT1G Applications
There are a lot of ON Semiconductor NSV40201LT1G applications of single BJT transistors.