ZXTN19100CFFTA Overview

DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 60mV allows maximum design flexibility.When VCE saturation is 235mV @ 450mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A transition frequency of 150MHz is present in the part.Breakdown input voltage is 100V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.

ZXTN19100CFFTA Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 235mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz

ZXTN19100CFFTA Applications

There are a lot of Diodes Incorporated ZXTN19100CFFTA applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting