JANTXV2N3767

new-10%

Manufacturer part number:JANTXV2N3767

Manufacturer:Microsemi Corporation

Description:Trans GP BJT NPN 80V 4A 3-Pin(2+Tab) TO-66

Case Package:SOT-23

Datasheet:JANTXV2N3767 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-213AA, TO-66-2
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Bulk
Published	2002
Series	Military, MIL-PRF-19500/518
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Max Power Dissipation	25W
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Pin Count	3
JESD-30 Code	O-MBFM-P2
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation	25W
Case Connection	COLLECTOR
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	80V
Max Collector Current	4A
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 500mA 5V
Current - Collector Cutoff (Max)	500μA
Vce Saturation (Max) @ Ib, Ic	2.5V @ 100mA, 1A
Transition Frequency	10MHz
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	6V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant