2N6491G Overview

In this device, the DC current gain is 20 @ 5A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 3.5V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3.5V @ 5A, 15A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 5MHz.Maximum collector currents can be below 15A volts.

2N6491G Features

the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz

2N6491G Applications

There are a lot of ON Semiconductor 2N6491G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting