KSD363YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD363YTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
40W
Current Rating
6A
Frequency
10MHz
Base Part Number
KSD363
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
10MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1A 5V
Current - Collector Cutoff (Max)
1mA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
10MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
8V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.360192
$1.360192
10
$1.283200
$12.832
100
$1.210566
$121.0566
500
$1.142043
$571.0215
1000
$1.077399
$1077.399
KSD363YTU Product Details
KSD363YTU Overview
This device has a DC current gain of 120 @ 1A 5V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 8V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 10MHz.During maximum operation, collector current can be as low as 6A volts.
KSD363YTU Features
the DC current gain for this device is 120 @ 1A 5V the vce saturation(Max) is 1V @ 100mA, 1A the emitter base voltage is kept at 8V the current rating of this device is 6A a transition frequency of 10MHz
KSD363YTU Applications
There are a lot of ON Semiconductor KSD363YTU applications of single BJT transistors.