MPSA05-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MPSA05-AP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.04830
$0.0966
6,000
$0.04200
$0.252
10,000
$0.03570
$0.357
50,000
$0.03150
$1.575
100,000
$0.02800
$2.8
MPSA05-AP Product Details
MPSA05-AP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 60V maximal voltage - Collector Emitter Breakdown.
MPSA05-AP Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA
MPSA05-AP Applications
There are a lot of Micro Commercial Co MPSA05-AP applications of single BJT transistors.