ZXTP25020DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP25020DFHTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
1.81W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
290MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP25020D
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.81W
Power - Max
1.25W
Transistor Application
SWITCHING
Gain Bandwidth Product
290MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
290MHz
Collector Emitter Saturation Voltage
60mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-4A
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.25838
$0.77514
6,000
$0.24263
$1.45578
15,000
$0.24000
$3.6
ZXTP25020DFHTA Product Details
ZXTP25020DFHTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 60mV.When VCE saturation is 180mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.In this part, there is a transition frequency of 290MHz.Single BJT transistor can be broken down at a voltage of 20V volts.Collector current can be as low as 4A volts at its maximum.
ZXTP25020DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of 60mV the vce saturation(Max) is 180mV @ 400mA, 4A the emitter base voltage is kept at -7V a transition frequency of 290MHz
ZXTP25020DFHTA Applications
There are a lot of Diodes Incorporated ZXTP25020DFHTA applications of single BJT transistors.