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ZXTP25020DFHTA

ZXTP25020DFHTA

ZXTP25020DFHTA

Diodes Incorporated

ZXTP25020DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25020DFHTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.81W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 290MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25020D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product 290MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 290MHz
Collector Emitter Saturation Voltage 60mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.25838 $0.77514
6,000 $0.24263 $1.45578
15,000 $0.24000 $3.6
ZXTP25020DFHTA Product Details

ZXTP25020DFHTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 60mV.When VCE saturation is 180mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.In this part, there is a transition frequency of 290MHz.Single BJT transistor can be broken down at a voltage of 20V volts.Collector current can be as low as 4A volts at its maximum.

ZXTP25020DFHTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 180mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 290MHz

ZXTP25020DFHTA Applications


There are a lot of Diodes Incorporated ZXTP25020DFHTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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