ZXTN25020DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN25020DFLTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
20V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
215MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN25020D
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
SWITCHING
Gain Bandwidth Product
215MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
270mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
215MHz
Collector Emitter Saturation Voltage
270mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.026928
$1.026928
10
$0.968800
$9.688
100
$0.913962
$91.3962
500
$0.862229
$431.1145
1000
$0.813423
$813.423
ZXTN25020DFLTA Product Details
ZXTN25020DFLTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 270mV.When VCE saturation is 270mV @ 450mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 7V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 215MHz.Input voltage breakdown is available at 20V volts.The maximum collector current is 2A volts.
ZXTN25020DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of 270mV the vce saturation(Max) is 270mV @ 450mA, 4.5A the emitter base voltage is kept at 7V the current rating of this device is 2A a transition frequency of 215MHz
ZXTN25020DFLTA Applications
There are a lot of Diodes Incorporated ZXTN25020DFLTA applications of single BJT transistors.