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ZXTN25040DFHTA

ZXTN25040DFHTA

ZXTN25040DFHTA

Diodes Incorporated

ZXTN25040DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN25040DFHTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 190MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN25040D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.81W
Transistor Application SWITCHING
Gain Bandwidth Product 190MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 190mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 190MHz
Collector Emitter Saturation Voltage 210mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 130V
Emitter Base Voltage (VEBO) 7V
hFE Min 300
Continuous Collector Current 4A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.464195 $0.464195
10 $0.437920 $4.3792
100 $0.413132 $41.3132
500 $0.389747 $194.8735
1000 $0.367686 $367.686
ZXTN25040DFHTA Product Details

ZXTN25040DFHTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 210mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 190mV @ 400mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 190MHz.As a result, it can handle voltages as low as 40V volts.When collector current reaches its maximum, it can reach 4A volts.

ZXTN25040DFHTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 190mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 190MHz

ZXTN25040DFHTA Applications


There are a lot of Diodes Incorporated ZXTN25040DFHTA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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