FJPF6806DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJPF6806DTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
150°C TJ
Packaging
Tube
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
40W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
4 @ 4A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
5V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
750V
Current - Collector (Ic) (Max)
6A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.301730
$2.30173
10
$2.171443
$21.71443
100
$2.048531
$204.8531
500
$1.932576
$966.288
1000
$1.823186
$1823.186
FJPF6806DTU Product Details
FJPF6806DTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 4 @ 4A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in the supplier's device package TO-220F.There is a 750V maximal voltage in the device due to collector-emitter breakdown.
FJPF6806DTU Features
the DC current gain for this device is 4 @ 4A 5V the vce saturation(Max) is 5V @ 1A, 4A the supplier device package of TO-220F
FJPF6806DTU Applications
There are a lot of ON Semiconductor FJPF6806DTU applications of single BJT transistors.