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FJPF6806DTU

FJPF6806DTU

FJPF6806DTU

ON Semiconductor

FJPF6806DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF6806DTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 40W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 4A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 5V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 750V
Current - Collector (Ic) (Max) 6A
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.301730 $2.30173
10 $2.171443 $21.71443
100 $2.048531 $204.8531
500 $1.932576 $966.288
1000 $1.823186 $1823.186
FJPF6806DTU Product Details

FJPF6806DTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 4 @ 4A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in the supplier's device package TO-220F.There is a 750V maximal voltage in the device due to collector-emitter breakdown.

FJPF6806DTU Features


the DC current gain for this device is 4 @ 4A 5V
the vce saturation(Max) is 5V @ 1A, 4A
the supplier device package of TO-220F

FJPF6806DTU Applications


There are a lot of ON Semiconductor FJPF6806DTU applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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