BCX5616H6327XTSA1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.This device can take an input voltage of 80V volts before it breaks down.Collector current can be as low as 1A volts at its maximum.

BCX5616H6327XTSA1 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCX5616H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX5616H6327XTSA1 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface