ZXTN5551ZTA Overview

DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 130MHz.This device can take an input voltage of 160V volts before it breaks down.The maximum collector current is 600mA volts.

ZXTN5551ZTA Features

the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

ZXTN5551ZTA Applications

There are a lot of Diodes Incorporated ZXTN5551ZTA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter