2SB1731TL Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 50mA, 1A.Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 280MHz is present in the part.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

2SB1731TL Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 280MHz

2SB1731TL Applications

There are a lot of ROHM Semiconductor 2SB1731TL applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter