ZXTN649FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN649FTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
725mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN649
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
3A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.398685
$1.398685
10
$1.319514
$13.19514
100
$1.244824
$124.4824
500
$1.174362
$587.181
1000
$1.107889
$1107.889
ZXTN649FTA Product Details
ZXTN649FTA Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 3A for high efficiency.The emitter base voltage can be kept at 7V for high efficiency.As a result, it can handle voltages as low as 25V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXTN649FTA Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 300mV @ 300mA, 3A the emitter base voltage is kept at 7V
ZXTN649FTA Applications
There are a lot of Diodes Incorporated ZXTN649FTA applications of single BJT transistors.