ZXTN649FTA Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 3A for high efficiency.The emitter base voltage can be kept at 7V for high efficiency.As a result, it can handle voltages as low as 25V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXTN649FTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 7V
ZXTN649FTA Applications
There are a lot of Diodes Incorporated ZXTN649FTA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
