SMBTA42E6327HTSA1 Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 50MHz.There is a breakdown input voltage of 300V volts that it can take.When collector current reaches its maximum, it can reach 500mA volts.
SMBTA42E6327HTSA1 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
SMBTA42E6327HTSA1 Applications
There are a lot of Infineon Technologies SMBTA42E6327HTSA1 applications of single BJT transistors.
- Inverter
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- Driver
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- Muting
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- Interface
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