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SMBTA42E6327HTSA1

SMBTA42E6327HTSA1

SMBTA42E6327HTSA1

Infineon Technologies

SMBTA42E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

SMBTA42E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 300V
Max Power Dissipation 360mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Frequency 70MHz
Base Part Number MBTA42
Number of Elements 1
Element Configuration Single
Power Dissipation 360mW
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 40
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.066912 $0.066912
500 $0.049200 $24.6
1000 $0.041000 $41
2000 $0.037615 $75.23
5000 $0.035154 $175.77
10000 $0.032701 $327.01
15000 $0.031626 $474.39
50000 $0.031097 $1554.85
SMBTA42E6327HTSA1 Product Details

SMBTA42E6327HTSA1 Overview


In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 50MHz.There is a breakdown input voltage of 300V volts that it can take.When collector current reaches its maximum, it can reach 500mA volts.

SMBTA42E6327HTSA1 Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz

SMBTA42E6327HTSA1 Applications


There are a lot of Infineon Technologies SMBTA42E6327HTSA1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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