50A02CH-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
50A02CH-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
700mW
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
700mW
Gain Bandwidth Product
690MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
120mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
690MHz
Collector Emitter Saturation Voltage
-60mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-5V
Height
900μm
Length
2.9mm
Width
1.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.278024
$0.278024
10
$0.262286
$2.62286
100
$0.247440
$24.744
500
$0.233434
$116.717
1000
$0.220221
$220.221
50A02CH-TL-E Product Details
50A02CH-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -60mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 120mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A breakdown input voltage of 50V volts can be used.Maximum collector currents can be below 500mA volts.
50A02CH-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V a collector emitter saturation voltage of -60mV the vce saturation(Max) is 120mV @ 10mA, 100mA the emitter base voltage is kept at -5V
50A02CH-TL-E Applications
There are a lot of ON Semiconductor 50A02CH-TL-E applications of single BJT transistors.