PBHV9040X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9040X,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.5W
Base Part Number
PBHV9040
Pin Count
3
Power - Max
1.5W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
250mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
200mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
Frequency - Transition
55MHz
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.401000
$0.401
10
$0.378302
$3.78302
100
$0.356889
$35.6889
500
$0.336687
$168.3435
1000
$0.317630
$317.63
PBHV9040X,115 Product Details
PBHV9040X,115 Overview
In this device, the DC current gain is 80 @ 100mA 10V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 20mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.An input voltage of 400V volts is the breakdown voltage.Collector current can be as low as 250mA volts at its maximum.
PBHV9040X,115 Features
the DC current gain for this device is 80 @ 100mA 10V the vce saturation(Max) is 200mV @ 20mA, 100mA the emitter base voltage is kept at 6V
PBHV9040X,115 Applications
There are a lot of Nexperia USA Inc. PBHV9040X,115 applications of single BJT transistors.