PBSS8110T,215 Overview

DC current gain in this device equals 150 @ 250mA 10V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 100mA, 1A.In the part, the transition frequency is 100MHz.The device exhibits a collector-emitter breakdown at 100V.

PBSS8110T,215 Features

the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz

PBSS8110T,215 Applications

There are a lot of Nexperia USA Inc. PBSS8110T,215 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting