ZXTP03200BGTA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -37mV.A VCE saturation (Max) of 275mV @ 400mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.Single BJT transistor can take a breakdown input voltage of 200V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

ZXTP03200BGTA Features

the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -37mV
the vce saturation(Max) is 275mV @ 400mA, 2A
the emitter base voltage is kept at -7V

ZXTP03200BGTA Applications

There are a lot of Diodes Incorporated ZXTP03200BGTA applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver