MMBT2907ALT1G

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Manufacturer part number:MMBT2907ALT1G

Manufacturer:ON Semiconductor

Description:MMBT2907ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBT2907ALT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Type	General Purpose
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Max Power Dissipation	300mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-600mA
Frequency	200MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MMBT2907A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	225mW
Transistor Application	SWITCHING
Gain Bandwidth Product	200MHz
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	-60V
Max Collector Current	-600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA 10V
Current - Collector Cutoff (Max)	10nA ICBO
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage	-60V
Current - Collector (Ic) (Max)	600mA
Transition Frequency	200MHz
Collector Emitter Saturation Voltage	-400mV
Max Breakdown Voltage	60V
Collector Base Voltage (VCBO)	-60V
Emitter Base Voltage (VEBO)	-5V
hFE Min	100
Max Junction Temperature (Tj)	150°C
Turn On Time-Max (ton)	45ns
Height	1.11mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free