ZXTP2012GTA Overview

In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -195mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of -5.5A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.The current rating of this fuse is -5.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 120MHz.A breakdown input voltage of 60V volts can be used.Collector current can be as low as 5.5A volts at its maximum.

ZXTP2012GTA Features

the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -195mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 120MHz

ZXTP2012GTA Applications

There are a lot of Diodes Incorporated ZXTP2012GTA applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter