ZXTP2012GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP2012GTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated DC
-60V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5.5A
Frequency
120MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP2012
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
-195mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
-5.5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.44375
$0.44375
2,000
$0.41750
$0.835
5,000
$0.40000
$2
ZXTP2012GTA Product Details
ZXTP2012GTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -195mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of -5.5A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.The current rating of this fuse is -5.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 120MHz.A breakdown input voltage of 60V volts can be used.Collector current can be as low as 5.5A volts at its maximum.
ZXTP2012GTA Features
the DC current gain for this device is 100 @ 2A 1V a collector emitter saturation voltage of -195mV the vce saturation(Max) is 250mV @ 500mA, 5A the emitter base voltage is kept at 7V the current rating of this device is -5.5A a transition frequency of 120MHz
ZXTP2012GTA Applications
There are a lot of Diodes Incorporated ZXTP2012GTA applications of single BJT transistors.