ZXTP25020DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP25020DGTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
5.3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
290MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP25020D
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
5.3W
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Gain Bandwidth Product
290MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
355mV @ 600mA, 6A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
290MHz
Collector Emitter Saturation Voltage
-355mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.088624
$2.088624
10
$1.970400
$19.704
100
$1.858868
$185.8868
500
$1.753649
$876.8245
1000
$1.654386
$1654.386
ZXTP25020DGTA Product Details
ZXTP25020DGTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.The collector emitter saturation voltage is -355mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 7V, an efficient operation can be achieved.As a result, the part has a transition frequency of 290MHz.Input voltage breakdown is available at 20V volts.A maximum collector current of 6A volts is possible.
ZXTP25020DGTA Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of -355mV the vce saturation(Max) is 355mV @ 600mA, 6A the emitter base voltage is kept at 7V a transition frequency of 290MHz
ZXTP25020DGTA Applications
There are a lot of Diodes Incorporated ZXTP25020DGTA applications of single BJT transistors.