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BUJD203A,127

  • BUJD203A,127
  • BUJD203A,127

BUJD203A,127

BUJD203A,127

WeEn Semiconductors

BUJD203A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJD203A,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Base Part Number BUJD203A
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 11 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 425V
Current - Collector (Ic) (Max) 4A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.29484 $1.4742
BUJD203A,127 Product Details

BUJD203A,127 Overview


DC current gain in this device equals 11 @ 2A 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a 425V maximal voltage in the device due to collector-emitter breakdown.

BUJD203A,127 Features


the DC current gain for this device is 11 @ 2A 5V
the vce saturation(Max) is 1V @ 600mA, 3A

BUJD203A,127 Applications


There are a lot of WeEn Semiconductors BUJD203A,127 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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