FJD3305H1TM Overview

DC current gain in this device equals 8 @ 2A 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1A, 4A.The base voltage of the emitter can be kept at 9V to achieve high efficiency.As you can see, the part has a transition frequency of 4MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

FJD3305H1TM Features

the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

FJD3305H1TM Applications

There are a lot of ON Semiconductor FJD3305H1TM applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting