TN6729A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TN6729A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 250mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-226AE
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.15000
$0.15
500
$0.1485
$74.25
1000
$0.147
$147
1500
$0.1455
$218.25
2000
$0.144
$288
2500
$0.1425
$356.25
TN6729A Product Details
TN6729A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
TN6729A Features
the DC current gain for this device is 50 @ 250mA 1V the vce saturation(Max) is 500mV @ 10mA, 250mA
TN6729A Applications
There are a lot of Rochester Electronics, LLC TN6729A applications of single BJT transistors.