JANTX2N4150S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N4150S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/394
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
70V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 5A 5V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
2.5V @ 1A, 10A
Transition Frequency
15MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
10V
Turn Off Time-Max (toff)
2000ns
Turn On Time-Max (ton)
550ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$12.88770
$1288.77
JANTX2N4150S Product Details
JANTX2N4150S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 5A 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 1A, 10A.Keeping the emitter base voltage at 10V allows for a high level of efficiency.As you can see, the part has a transition frequency of 15MHz.Maximum collector currents can be below 10A volts.
JANTX2N4150S Features
the DC current gain for this device is 40 @ 5A 5V the vce saturation(Max) is 2.5V @ 1A, 10A the emitter base voltage is kept at 10V a transition frequency of 15MHz
JANTX2N4150S Applications
There are a lot of Microsemi Corporation JANTX2N4150S applications of single BJT transistors.