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2SC4726TLP

2SC4726TLP

2SC4726TLP

ROHM Semiconductor

2SC4726TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4726TLP Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4726
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 3.2 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 11V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 11V
Max Frequency 500MHz
Transition Frequency 3200MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 11V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 56
Continuous Collector Current 50mA
Highest Frequency Band S B
Collector-Base Capacitance-Max 1.5pF
Height 700μm
Length 1.6mm
Width 800μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.381685 $0.381685
10 $0.360080 $3.6008
100 $0.339698 $33.9698
500 $0.320470 $160.235
1000 $0.302330 $302.33
2SC4726TLP Product Details

2SC4726TLP Overview


This device has a DC current gain of 56 @ 5mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 50mA in order to achieve high efficiency.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).There is a transition frequency of 3200MHz in the part.A breakdown input voltage of 11V volts can be used.A maximum collector current of 50mA volts is possible.

2SC4726TLP Features


the DC current gain for this device is 56 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz

2SC4726TLP Applications


There are a lot of ROHM Semiconductor 2SC4726TLP applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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