2SC4726TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4726TLP Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
11V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4726
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3.2 GHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
11V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage
11V
Max Frequency
500MHz
Transition Frequency
3200MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
11V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
3V
hFE Min
56
Continuous Collector Current
50mA
Highest Frequency Band
S B
Collector-Base Capacitance-Max
1.5pF
Height
700μm
Length
1.6mm
Width
800μm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.381685
$0.381685
10
$0.360080
$3.6008
100
$0.339698
$33.9698
500
$0.320470
$160.235
1000
$0.302330
$302.33
2SC4726TLP Product Details
2SC4726TLP Overview
This device has a DC current gain of 56 @ 5mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 50mA in order to achieve high efficiency.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).There is a transition frequency of 3200MHz in the part.A breakdown input voltage of 11V volts can be used.A maximum collector current of 50mA volts is possible.
2SC4726TLP Features
the DC current gain for this device is 56 @ 5mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 10mA the emitter base voltage is kept at 3V the current rating of this device is 50mA a transition frequency of 3200MHz
2SC4726TLP Applications
There are a lot of ROHM Semiconductor 2SC4726TLP applications of single BJT transistors.