ZXTP4001ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP4001ZTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89
Weight
130.492855mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Max Power Dissipation
1.5W
Polarity
PNP
Element Configuration
Single
Power - Max
1.5W
Transistor Type
PNP
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 85mA 100mV
Current - Collector Cutoff (Max)
500nA ICBO
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
hFE Min
60
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.977490
$0.97749
10
$0.922160
$9.2216
100
$0.869962
$86.9962
500
$0.820719
$410.3595
1000
$0.774263
$774.263
ZXTP4001ZTA Product Details
ZXTP4001ZTA Overview
This device has a DC current gain of 60 @ 85mA 100mV, which is the ratio between the base current and the collector current.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Product comes in SOT-89 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZXTP4001ZTA Features
the DC current gain for this device is 60 @ 85mA 100mV the emitter base voltage is kept at 7V the supplier device package of SOT-89
ZXTP4001ZTA Applications
There are a lot of Diodes Incorporated ZXTP4001ZTA applications of single BJT transistors.