NSS12100M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSS12100M3T5G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
FLAT
Base Part Number
NSS12100
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
410mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
-35mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
5V
hFE Min
80
Height
550μm
Length
1.25mm
Width
850μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.716051
$0.716051
10
$0.675520
$6.7552
100
$0.637283
$63.7283
500
$0.601210
$300.605
1000
$0.567180
$567.18
NSS12100M3T5G Product Details
NSS12100M3T5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 2V.A collector emitter saturation voltage of -35mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 410mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 12V volts.A maximum collector current of 1A volts is possible.
NSS12100M3T5G Features
the DC current gain for this device is 120 @ 500mA 2V a collector emitter saturation voltage of -35mV the vce saturation(Max) is 410mV @ 100mA, 1A the emitter base voltage is kept at 5V
NSS12100M3T5G Applications
There are a lot of ON Semiconductor NSS12100M3T5G applications of single BJT transistors.