NSS12100M3T5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 2V.A collector emitter saturation voltage of -35mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 410mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 12V volts.A maximum collector current of 1A volts is possible.
NSS12100M3T5G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -35mV
the vce saturation(Max) is 410mV @ 100mA, 1A
the emitter base voltage is kept at 5V
NSS12100M3T5G Applications
There are a lot of ON Semiconductor NSS12100M3T5G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
