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EPC2111

  • EPC2111
  • EPC2111

EPC2111

EPC2111

EPC

GAN TRANS ASYMMETRICAL HALF BRID

SOT-23

EPC2111 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V 590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V
Drain to Source Voltage (Vdss) 30V
FET Feature GaNFET (Gallium Nitride)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.737653 $5.737653
10 $5.412880 $54.1288
100 $5.106491 $510.6491
500 $4.817444 $2408.722
1000 $4.544758 $4544.758

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