FDS6875

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Manufacturer part number:FDS6875

Manufacturer:ON Semiconductor

Description:FDS6875 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS6875 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	30mOhm
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	-6A
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	8 ns
Power - Max	900mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A
Gate Charge (Qg) (Max) @ Vgs	31nC @ 5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	-6A
Threshold Voltage	-800mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free