IPP60R190E6 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 418 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 20.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 90 ns.Peak drain current is 59A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 170mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).

IPP60R190E6 Features

the avalanche energy rating (Eas) is 418 mJ
a continuous drain current (ID) of 20.2A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 59A.
single MOSFETs transistor is 170mOhm
a 600V drain to source voltage (Vdss)

IPP60R190E6 Applications

There are a lot of Infineon
IPP60R190E6 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies