AIGB30N65F5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
AIGB30N65F5ATMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Status
Active
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
30A
IGBT Type
NPT
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.923977
$2.923977
10
$2.758469
$27.58469
100
$2.602329
$260.2329
500
$2.455027
$1227.5135
1000
$2.316063
$2316.063
AIGB30N65F5ATMA1 Product Details
AIGB30N65F5ATMA1 Description
IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics.
AIGB30N65F5ATMA1 Applications
electronic applications
consumer electronics
AIGB30N65F5ATMA1 Features
? Automotive-qualified power semiconductor portfolio
including both power module and discrete solutions for
flexible coverage of all power classes
? Highly efficient 3-phase driver thanks to very low
conduction losses even at high switching frequencies