AUIRG4BC30S-S

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Manufacturer part number:AUIRG4BC30S-S

Manufacturer:Infineon Technologies

Description:AUIRG4BC30S-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRG4BC30S-S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	34A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Turn On Time	40 ns
Test Condition	480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 18A
Turn Off Time-Nom (toff)	1550 ns
Gate Charge	50nC
Current - Collector Pulsed (Icm)	68A
Td (on/off) @ 25°C	22ns/540ns
Switching Energy	260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	590ns
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free