IXYP8N90C3

new-10%

Manufacturer part number:IXYP8N90C3

Manufacturer:IXYS

Description:IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT

Case Package:SOT-23

Datasheet:IXYP8N90C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	20A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.15V
Turn On Time	39 ns
Test Condition	450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 8A
Turn Off Time-Nom (toff)	238 ns
Gate Charge	13.3nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	16ns/40ns
Switching Energy	460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	16mm
Length	10.66mm
Width	4.83mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free